Publications
Publications by Research Area
Publications by Division
X Author: S Aggarwal
1999
Krauss, A.R, A Dhote, O Auciello, J Im, Ramamoorthy Ramesh, and S Aggarwal."Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors."Integrated Ferroelectrics
27 (1999) 147-157. DOI
Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters
75 (1999) 1787-1789. DOI
Alpay, S.P, V Nagarajan, L.A Bendersky, M.D Vaudin, S Aggarwal, Ramamoorthy Ramesh, and A.L Roytburd."The stress state and domain structure of epitaxial PbZr0.2Ti0.8O3 films on (001) SrTiO3 with and without la0.5r0.5CoO3 electrode layer."Materials Research Society Symposium - Proceedings
541 (1999) 357-362.
Nagarajan, V, I.G Jenkins, S.P Alpay, H Li, S Aggarwal, L Salamanca-Riba, A.L Roytburd, and Ramamoorthy Ramesh."Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films."Journal of Applied Physics
86 (1999) 595-602. DOI
1998
Song, T.K, S Aggarwal, Y Gallais, B Nagaraj, Ramamoorthy Ramesh, and J .T Jr."Activation fields in ferroelectric thin film capacitors: Area dependence."Applied Physics Letters
73 (1998) 3366-3368. DOI
Jenkins, I.G, T.K Song, S Madhukar, A.S Prakash, S Aggarwal, and Ramamoorthy Ramesh."Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors."Applied Physics Letters
72 (1998) 3300-3302. DOI
Aggarwal, S, S.R Perusse, C.W Tipton, Ramamoorthy Ramesh, H.D Drew, T Venkatesan, D.B Romero, V.B Podobedov, and A Weber."Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors."Applied Physics Letters
73 (1998) 1973-1975. DOI
Sadashivan, S, S Aggarwal, T.K Song, Ramamoorthy Ramesh, J .T Jr, B.A Tuttle, W.L Warren, and D Dimos."Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors."Journal of Applied Physics
83 (1998) 2165-2171. DOI
Stanishevsky, A, S Aggarwal, A.S Prakash, J Melngailis, and Ramamoorthy Ramesh."Focused ion-beam patterning of nanoscale ferroelectric capacitors."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16 (1998) 3899-3902.
Friessnegg, T, S Aggarwal, B Nielsen, Ramamoorthy Ramesh, D.J Keeble, and E.H Poindexter."Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation."IEEE International Symposium on Applications of Ferroelectrics
(1998) 147-150.
Aggarwal, S, A.S Prakash, T.K Song, S Sadashivan, A.M Dhote, B Yang, Ramamoorthy Ramesh, Y Kisler, and S.E Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics
19 (1998) 159-177. DOI
Li, H, B Yang, A Dhote, S Aggarwal, L Salamanca-Riba, and Ramamoorthy Ramesh."Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors."Materials Research Society Symposium - Proceedings
493 (1998) 171-176.
Gruverman, A, S.A Prakash, S Aggarwal, Ramamoorthy Ramesh, O Auciello, and H Tokumoto."Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy."Materials Research Society Symposium - Proceedings
493 (1998) 53-58.
Auciello, O, A Gruverman, H Tokumoto, S.A Prakash, S Aggarwal, and Ramamoorthy Ramesh."Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films."MRS Bulletin
23 (1998) 33-41.
Bernhard, J.M, A Rouse, E.D Sosa, D.E Golden, B.R Chalamala, S Aggarwal, B.E Gnade, and Ramamoorthy Ramesh."Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings."Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
(1998) 32-33.
Aggarwal, S, and Ramamoorthy Ramesh."Point defect chemistry of metal oxide heterostructures."Annual Review of Materials Science
28 (1998) 463-499. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, P Shuk, M Greenblatt, Ramamoorthy Ramesh, and A.L Roytburd."Polydomain formation in epitaxial PbTiO3 films."Scripta Materialia
39 (1998) 1435-1441. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, Ramamoorthy Ramesh, A.L Roytburd, P Shuk, and M Greenblatt."Polydomain structure of epitaxial PbTiO3 films on MgO."Materials Research Society Symposium - Proceedings
493 (1998) 111-116.
Song, T.K, J Ahn, B Yang, S Aggarwal, and Ramamoorthy Ramesh."Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories."Journal of the Korean Physical Society
32 (1998) S1721-S1723.
Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics
2 (1998) 171-179. DOI
Keeble, D.J, A Krishnan, T Friessnegg, B Nielsen, S Madhukar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter."Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation."Applied Physics Letters
73 (1998) 508-510. DOI
1997
Song, T.K, S Aggarwal, A.S Prakash, B Yang, and Ramamoorthy Ramesh."Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors."Applied Physics Letters
71 (1997) 2211-2213. DOI
Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, A Krishnan, D Keeble, and E Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics
81 (1997) 3543-3547. DOI
Yang, B, S Aggarwal, A.M Dhote, T.K Song, Ramamoorthy Ramesh, and J.S Lee."La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier."Applied Physics Letters
71 (1997) 356-358. DOI
Yang, B, T.K Song, S Aggarwal, and Ramamoorthy Ramesh."Low voltage performance of Pb(Zr, Ti)O3 capacitors through donor doping."Applied Physics Letters
71 (1997) 3578-3580. DOI