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Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors

Publication Type

Journal Article

Authors

Song, T.K, S Aggarwal, A.S Prakash, B Yang, Ramamoorthy Ramesh

DOI

10.1063/1.119383

Abstract

We report results on the activation field and frequency dependence of the coercive voltage in epitaxial ferroelectric thin film capacitors. Frequency dependent hysteresis loops and pulse width dependent polarization of epitaxial La0.5Sr0.5CoO3/(Pb,La)(Zr,Ti)O 3/La0.5Sr0.5CoO3 capacitor structures were measured as a function of La content. The coercive voltages and their frequency dependence vary systematically with increasing La content. We show that the activation field for polarization reversal is directly related to the c/a ratio (tetragonality ratio) of the ferroelectric layer. A larger c/a ratio leads to a larger field to activate the motion of domain walls through the lattice. An important consequence of a larger activation field is a stronger pulse width dependence of the pulse switched polarization. © 1997 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

1997

ISSN

00036951

Notes

cited By 52

Research Areas

Ramesh Lab