Publications
Publications by Research Area
Publications by Division
X Author: A.L Roytburd
2007
Ouyang, J, J Slusker, I Levin, D.-M Kim, C.-B Eom, Ramamoorthy Ramesh, and A.L Roytburd."Engineering of self-assembled domain architectures with ultra-high piezoelectric response in epitaxial ferroelectric films."Advanced Functional Materials
17 (2007) 2094-2100. DOI
2006
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Theoretical investigation of the intrinsic piezoelectric properties for tetragonal BaTiO 3 epitaxial films."Applied Surface Science
252 (2006) 3394-3400. DOI
2005
Ma, Z, F Zavaliche, L Chen, J Ouyang, J Melngailis, A.L Roytburd, V Vaithyanathan, D.G Schlom, T Zhao, and Ramamoorthy Ramesh."Effect of 90° domain movement on the piezoelectric response of patterned PbZr 0.2 Ti 0.8 O 3 SrTiO 3 Si heterostructures."Applied Physics Letters
87 (2005). DOI
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Effective direct piezoelectric constants in epitaxial ferroelectric films as MEMS sensors."Materials Research Society Symposium Proceedings
881 (2005) 125-130.
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Intrinsic effective piezoelectric coefficient e 31,f for ferroelectric thin films."Applied Physics Letters
86 (2005) 1-3. DOI
Ouyang, J, D.M Kim, C.B Eom, Ramamoorthy Ramesh, and A.L Roytburd."Orientation dependence of the intrinsic converse longitudinal piezoelectric constant for 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 ferroelectric films with a rhombohedral structure."Smart Materials and Structures
14 (2005) 524-528. DOI
Li, J, I Levin, J Slutsker, V Provenzano, P.K Schenck, Ramamoorthy Ramesh, J Ouyang, and A.L Roytburd."Self-assembled multiferroic nanostructures in the Co Fe 2 O 4 -PbTi O 3 system."Applied Physics Letters
87 (2005). DOI
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Theoretical predictions for the intrinsic converse longitudinal piezoelectric constants of lead zirconate titanate epitaxial films."Advanced Engineering Materials
7 (2005) 229-232. DOI
2004
Li, J.-H, L Chen, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Finite element modeling of piezoresponse in nanostructured ferroelectric films."Applied Physics Letters
84 (2004) 2626-2628. DOI
Chen, L, J Ouyang, C.S Ganpule, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films."Applied Physics Letters
84 (2004) 254-256. DOI
Ouyang, J, S.Y Yang, L Chen, Ramamoorthy Ramesh, and A.L Roytburd."Orientation dependence of the converse piezoelectric constants for epitaxial single domain ferroelectric films."Applied Physics Letters
85 (2004) 278-280. DOI
2003
Chen, L, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Nonlinear electric field dependence of piezoresponse in epitaxial ferroelectric lead zirconate titanate thin films."Journal of Applied Physics
94 (2003) 5147-5152. DOI
2002
Ganpule, C.S, V Nagarajan, B.K Hill, A.L Roytburd, E.D Williams, Ramamoorthy Ramesh, S.P Alpay, A Roelofs, R Waser, and L.M Eng."Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films."Journal of Applied Physics
91 (2002) 1477-1481. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, B.K Hill, S.B Ogale, E.D Williams, Ramamoorthy Ramesh, and J.F Scott."Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films."Physical Review B - Condensed Matter and Materials Physics
65 (2002) 1-7. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, B.K Hill, S.B Ogale, E.D Williams, Ramamoorthy Ramesh, and J.F Scott."Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films."Physical Review B - Condensed Matter and Materials Physics
65 (2002) 141011-141017.
Nagarajan, V, A Stanishevsky, L Chen, T Zhao, B.-T Liu, J Melngailis, A.L Roytburd, Ramamoorthy Ramesh, J Finder, Z Yu, R Droopad, and K Eisenbeiser."Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si."Applied Physics Letters
81 (2002) 4215-4217. DOI
2001
Alpay, S.P, A.L Roytburd, V Nagarajan, L.A Bendersky, and Ramamoorthy Ramesh."Cellular domain architecture of stress-free epitaxial ferroelectric films."Materials Research Society Symposium - Proceedings
655 (2001) XLXXV-XLXXVI.
Nagarajan, V, C.S Ganpule, H Li, L Salamanca-Riba, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates."Applied Physics Letters
79 (2001) 2805-2807. DOI
Li, H, A.L Roytburd, S.P Alpay, T.D Tran, L Salamanca-Riba, and Ramamoorthy Ramesh."Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films."Applied Physics Letters
78 (2001) 2354-2356. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, A Stanishevsky, J Melngailis, E.D Williams, and Ramamoorthy Ramesh."Nanoscale electromechanical phenomena in ferroelectric thin films."Materials Research Society Symposium - Proceedings
655 (2001) XVI-XVII.
Roytburd, A.L, S.P Alpay, L.A Bendersky, V Nagarajan, and Ramamoorthy Ramesh."Three-domain architecture of stress-free epitaxial ferroelectric films."Journal of Applied Physics
89 (2001) 553-556. DOI
2000
Canedy, C.L, H Li, S.P Alpay, L Salamanca-Riba, A.L Roytburd, and Ramamoorthy Ramesh."Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects."Applied Physics Letters
77 (2000) 1695-1697. DOI
Ganpule, C.S, V Nagarajan, S.B Ogale, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Domain nucleation and relaxation kinetics in ferroelectric thin films."Applied Physics Letters
77 (2000) 3275-3277. DOI
Nagarajan, V, S.P Alpay, C.S Ganpule, B Nagaraj, S Aggarwal, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness."Materials Research Society Symposium - Proceedings
596 (2000) 505-510.
Roytburd, A.L, S.P Alpay, V Nagarajan, C.S Ganpule, S Aggarwal, E.D Williams, and Ramamoorthy Ramesh."Measurement of internal stresses via the polarization in epitaxial ferroelectric films."Physical Review Letters
85 (2000) 190-193. DOI