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Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects

Publication Type

Journal Article

Authors

Canedy, C.L., H. Li, S.P. Alpay, L. Salamanca-Riba, A.L. Roytburd, Ramamoorthy Ramesh

DOI

10.1063/1.1308531

Abstract

A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm-2 as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

2000

ISSN

00036951

Notes

cited By 222

Research Areas

Ramesh Lab