Publications
Publications by Research Area
Publications by Division
X Author: M.S Hegde
1990
Chang, C.C, T Venkatesan, M.S Hegde, D.M Hwang, Ramamoorthy Ramesh, C.T Rogers, A Frenkel, E.W Chase, L Nazar, X.D Wu, and A Inam."Electron microscopy and spectroscopy for characterization of surface and film properties of high temperature superconductors."Proceedings of SPIE - The International Society for Optical Engineering
1187 (1990) 216-226. DOI
Ramesh, Ramamoorthy, E Wang, L.H Greene, M.S Hegde, and J.-M Tarascon."Electron Microscopy of the Pb-Sr-Ca-Er-Cu-O Superconductor."Journal of Materials Research
5 (1990) 251-257. DOI
Hwang, D.M, Ramamoorthy Ramesh, C.Y Chen, X.D Wu, A Inam, M.S Hegde, B Wilkens, C.C Chang, L Nazar, T Venkatesan, S Miura, S Matsubara, Y Miyasaka, and N Shohata."Epitaxial relations between in situ superconducting YBa2Cu 3O7-x thin films and BaTiO3/MgAl 2O4/Si substrates."Journal of Applied Physics
68 (1990) 1772-1776. DOI
Venkatesan, T, A Inam, B Dutta, Ramamoorthy Ramesh, M.S Hegde, X.D Wu, L Nazar, C.C Chang, J.B Barner, D.M Hwang, and C.T Rogers."Epitaxial Y1Ba2Cu3O7-y/Y 1-xPrxBa2Cu3O7-y heterostructures."Applied Physics Letters
56 (1990) 391-393. DOI
1989
Tarascon, J.-M, P Barboux, G.W Hull, Ramamoorthy Ramesh, L.H Greene, M Giroud, M.S Hegde, and W.R McKinnon."Bismuth cuprate high-Tc superconductors using cationic substitution."Physical Review B
39 (1989) 4316-4326. DOI
Ramesh, Ramamoorthy, M.S Hegde, C.C Chang, J.M Tarascon, S.M Green, and H.L Luo."Doping mechanism in Bi(Pb)-Sr-Ca-Cu-O superconductors."Journal of Applied Physics
66 (1989) 4878-4885. DOI
Ramesh, Ramamoorthy, A Inam, W.A Bonner, P England, B.J Wilkens, B.J Meagher, L Nazar, X.D Wu, M.S Hegde, C.C Chang, T Venkatesan, and H Padamsee."Ferrimagnetic rare-earth orthoferrites: A new, magnetic substrate for the growth of epitaxial Y-Ba-Cu-O thin films."Applied Physics Letters
55 (1989) 1138-1140. DOI
Sandroff, C.J, J.P Harbison, Ramamoorthy Ramesh, M.J Andrejco, M.S Hegde, D.M Hwang, C.C Chang, and E.M Vogel."GaAs clusters in the quantum size regime: Growth on high surface area silica by molecular beam epitaxy."Science
245 (1989) 391-393. DOI