Publications
Publications by Research Area
Publications by Division
X Author: Eicke R Weber
2001
Huang, Michael H, Samuel S Mao, Henning Feick, Haoquan Yan, Yiying Wu, Hannes Kind, Eicke R Weber, Richard E Russo, and Peidong Yang."Room-temperature ultraviolet nanowire nanolasers."Science
292.5523 (2001) 1897-1899. DOI
1997
Leung, Michael S.H, Ralf Klockenbrink, Christian F Kisielowski, Hiroaki Fujii, Joachim Krüger, Sudhir G Subramanya, André Anders, Zuzanna Liliental-Weber, Michael D Rubin, Eicke R Weber, and Joachim Krüger."Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source."Materials Research Society Proceedings
449.221 (1997). DOI
1996
Kisielowski, Christian F, Joachim Krüger, Sergei Ruvimov, Tadeusz Suski, Joel W Ager, Erin C Jones, Zuzanna Liliental-Weber, Michael D Rubin, Eicke R Weber, Michael D Bremser, Robert F Davis, and Joachim Krüger."Strain Related Phenomena in GaN Thin Films."Physical Review B
54.24 (1996) 17745-17753. DOI
Fujii, Hiroaki, Christian F Kisielowski, Joachim Krüger, Michael S.H Leung, Ralf Klockenbrink, Michael D Rubin, Eicke R Weber, and Joachim Krüger."Impact of Growth Temperature, Pressure and Strain on the Morphology of GaN Films."Materials Research Society Symposium N – III-V Nitrides
449 (1996) 227. DOI
Kisielowski, Christian F, Joachim Krüger, Michael S.H Leung, Ralf Klockenbrink, Hiroaki Fujii, Tadeusz Suski, Sudhir G Subramanya, Joel W Ager, Michael D Rubin, Eicke R Weber, and Joachim Krüger."Origin of Strain in GaN Thin Films."23rd International Conference on the Physics of Semiconductors
4 (1996) 513.
1995
Chan, James S, Nathan W Cheung, Lawrence F Schloss, Erin C Jones, William S Wong, Nathan Newman, Xiaohong Liu, Eicke R Weber, A Gassman, and Michael D Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters
68.19 (1995) 2702-2704. DOI
Fu, T.C, Nathan Newman, Erin C Jones, James S Chan, Xiaohong Liu, Michael D Rubin, Nathan W Cheung, and Eicke R Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials
24.4 (1995) 249-255. DOI