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Voltage shifts and imprint in ferroelectric capacitors

Publication Type

Journal Article

Authors

Warren, W.L., D. Dimos, G.E. Pike, B.A. Tuttle, M.V. Raymond, Ramamoorthy Ramesh, J.T. Jr.

DOI

10.1063/1.115531

Abstract

Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O3 capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift.© 1995 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

1995

ISSN

00036951

Notes

cited By 170

Research Areas

Ramesh Lab