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Voltage-Controlled Ferroelastic Switching in Pb(Zr0.2Ti0.8)O3 Thin Films

Publication Type

Journal Article

Authors

Khan, A.I., X. Marti, C. Serrao, Ramamoorthy Ramesh, S. Salahuddin

DOI

10.1021/nl503806p

Abstract

We report a voltage controlled reversible creation and annihilation of a-axis oriented ∼10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains. (Figure Presented). © 2015 American Chemical Society.

Journal

Nano Letters

Volume

Year of Publication

2015

ISSN

15306984

Notes

cited By 23

Research Areas

Ramesh Lab