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The Temperature Dependence of Ferroelectric Imprint

Publication Type

Journal Article

Authors

Benedetto, J.M., I.K. Lloyd, Ramamoorthy Ramesh

DOI

10.1080/10584589508012284

Abstract

Unidirectional voltage pulse stressing can induce a significant amount of asymmetry in the retention characteristics in certain LSCO/PLZT/LSCO thin films. A large asymmetry was developed within 1000 s of unidirectional pulsing with a 100-Hz (50% duty cycle) square wave at 125°C while no significant retention asymmetry was developed at 25°C in the same time frame. The change in respective switched and non-switched polarizations after voltage pulse stressing follow an Arrhenius behavior. The thermal activation energies (Ea) derived from the Arrhenius plots are Ea = 0.21 eV for the change in switched polarization and an Ea = 0.56 eV for the change in non-switched polarization. © 1995, Taylor & Francis Group, LLC. All rights reserved.

Journal

Integrated Ferroelectrics

Volume

Year of Publication

1995

ISSN

10584587

Notes

cited By 13

Research Areas

Ramesh Lab