Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

Publication Type

Journal Article

Date Published

08/2004

Authors

DOI

Abstract

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ~ Q1/2, whereas the rate normalized to the average power decreases ~ Q-1/2, with Q being the mean ion charge state number.

Journal

Applied Physics Letters

Volume

92

Year of Publication

2008

Issue

20

Organization

Research Areas

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