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Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays

Publication Type

Conference Paper

Authors

Chalamala, B.R, R.H Reuss, Y Wei, J.M Bernhard, E.D Sosa, D.E Golden, S Aggarwal, Ramamoorthy Ramesh

Abstract

Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.

Journal

Materials Research Society Symposium Proceedings

Volume

685

Year of Publication

2001

ISSN

02729172

Notes

cited By 0

Research Areas

Ramesh Lab