A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications
Publication Type
Journal Article
Authors
Van Keuls, F.W, R.R Romanofsky, N.D Varaljay, F.A Miranda, C.L Canedy, S Aggarwal, T Venkatesan, Ramamoorthy Ramesh
DOI
Abstract
We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔφS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. © 1999 John Wiley & Sons, Inc.
Journal
Microwave and Optical Technology Letters
Volume
20
Year of Publication
1999
ISSN
08952477
Notes
cited By 33