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A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications

Publication Type

Journal Article

Authors

Van Keuls, F.W., R.R. Romanofsky, N.D. Varaljay, F.A. Miranda, C.L. Canedy, S. Aggarwal, T. Venkatesan, Ramamoorthy Ramesh

DOI

10.1002/(SICI)1098-2760(19990105)20:1<53::AID-MOP15>3.0.CO;2-L

Abstract

We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔφS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. © 1999 John Wiley & Sons, Inc.

Journal

Microwave and Optical Technology Letters

Volume

Year of Publication

1999

ISSN

08952477

Notes

cited By 33

Research Areas

Ramesh Lab