High Speed Epitaxial Perovskite Memory on Flexible Substrates
Publication Type
Journal Article
Authors
Bakaul, S.R., C.R. Serrao, O. Lee, Z. Lu, A. Yadav, C. Carraro, R. Maboudian, Ramamoorthy Ramesh, S. Salahuddin
DOI
Abstract
Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.
Journal
Advanced Materials
Volume
29
Year of Publication
2017
ISSN
09359648