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High Speed Epitaxial Perovskite Memory on Flexible Substrates

Publication Type

Journal Article

Authors

Bakaul, S.R, C.R Serrao, O Lee, Z Lu, Ajay K Yadav, C Carraro, R Maboudian, Ramamoorthy Ramesh, S Salahuddin

DOI

10.1002/adma.201605699

Abstract

Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.

Journal

Advanced Materials

Volume

Year of Publication

2017

ISSN

09359648

Notes

cited By 34

Research Areas

Ramesh Lab