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Ferroelectric field effect transistor based on epitaxial perovskite heterostructures

Publication Type

Journal Article

Authors

Mathews, S., Ramamoorthy Ramesh, T. Venkatesan, J. Benedetto

DOI

10.1126/science.276.5310.238

Abstract

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be 'tuned' by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.

Journal

Science

Volume

276

Year of Publication

1997

ISSN

00368075

Notes

cited By 491

Research Areas

Ramesh Lab