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Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon

Publication Type

Journal Article

Authors

Ramesh, Ramamoorthy, A. Inam, B. Wilkens, W.K. Chan, T. Sands, J.M. Tarascon, D.K. Fork, T.H. Geballe, J. Evans, J. Bullington

DOI

10.1063/1.106199

Abstract

The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO 2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°-1.2°for the bismuth titanate layer and 0.6°-0.8°for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45°to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.

Journal

Applied Physics Letters

Volume

Year of Publication

1991

ISSN

00036951

Notes

cited By 49

Research Areas

Ramesh Lab