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Exploration of artificial multiferroic thin-film heterostructures using composition spreads

Publication Type

Journal Article

Authors

Chang, K.-S., M.A. Aronova, C.-L. Lin, M. Murakami, M.-H. Yu, J. R. Hattrick-Simpers, O.O. Famodu, S.Y. Lee, Ramamoorthy Ramesh, M. Wuttig, I. Takeuchi, C. Gao, L.A. Bendersky

DOI

10.1063/1.1699474

Abstract

The fabrication of a series of composition spreads consisting of ferroelectric BaTiO 3 and piezoelectric CoFe 2O 4 layers of varying thickness modulated at nanometer level in order to explore artificial magnetoresistance thin-film heterostructures was discussed. The scanning microwave microscopy and scanning superconducting quantum interference device microscopy were used for mapping the dielectric and magnetic properties as a function of continuously changing average composition across the spreads, respectively. The compositions in the middle of the spreads were found to exhibit ferromagnetism where as displaying a dielectric constant as high as ≈ 120.

Journal

Applied Physics Letters

Volume

Year of Publication

2004

ISSN

00036951

Notes

cited By 74

Research Areas

Ramesh Lab