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Dielectric properties of SrTiO3 thin films used in high T c superconducting field-effect devices

Publication Type

Journal Article

Authors

Walkenhorst, A., C. Doughty, X.X. Xi, S.N. Mao, Q. Li, T. Venkatesan, Ramamoorthy Ramesh

DOI

10.1063/1.107204

Abstract

The dielectric constant of thin epitaxial SrTiO3 films used as dielectric layers in high Tc superconducting field-effect devices has been studied. in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO3 dielectric layers are strongly influenced by the metal used as the gate electrode.

Journal

Applied Physics Letters

Volume

Year of Publication

1992

ISSN

00036951

Notes

cited By 61

Research Areas

Ramesh Lab