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Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3

Publication Type

Journal Article

Authors

Barrozo, P., D.R. Småbråten, Y.-L. Tang, B. Prasad, S. Saremi, R. Ozgur, V. Thakare, R.A. Steinhardt, M.E. Holtz, V.A. Stoica, L.W. Martin, D.G. Schlom, S.M. Selbach, Ramamoorthy Ramesh

DOI

10.1002/adma.202000508

Abstract

Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Journal

Advanced Materials

Year of Publication

2020

ISSN

09359648

Notes

cited By 0

Research Areas

Ramesh Lab