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Dark spot formation relative to ITO surface roughness for polyfluorene devices

Publication Type

Journal Article

Date Published

07/2004

Authors

Liu, Gao, John B. Kerr, Stephen G. Johnson

DOI

10.1016/j.synthmet.2004.01.011

Abstract

The failure behaviors of ITO/PEDOT;PSS/polyfluorene/Al devices are different depending on the surface roughness of the sputtered ITO anode film. The spikes on ITO surface are responsible for the initial local shorts of the device, which develop into dark spots very quickly. Indium adsorption is observed on the polymer and Al cathode interface. A chemical etching procedure is used to smoothen the ITO surface without changing the ITO thickness and the sheet resistance. Devices made out of smooth ITO show minimum changes at polymer-cathode interface during operation.

Journal

Synthetic Metals

Volume

144

Year of Publication

2004

Issue

Organization

Energy Storage and Distributed Resources Division, Applied Energy Materials Group,

Research Areas

Liu Lab