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Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films

Publication Type

Journal Article

Authors

Zhang, J.X., Y.L. Li, S. Choudhury, L.Q. Chen, Y.H. Chu, F. Zavaliche, M.P. Cruz, Ramamoorthy Ramesh, Q.X. Jia

DOI

10.1063/1.2927385

Abstract

Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.

Journal

Journal of Applied Physics

Volume

103

Year of Publication

2008

ISSN

00218979

Notes

cited By 56

Research Areas

Ramesh Lab