Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy
Publication Type
Conference Paper
Date Published
04/1993
Authors
Abstract
Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.
Journal
Materials Research Society
Volume
300
Year of Publication
1993
Organization
Building Technologies Department, Building Technology and Urban Systems Division, Windows and Envelope Materials
Research Areas
Advanced Coatings, Building Façade Solutions, Windows and Daylighting, W and D: Dynamic Glazings and Advanced Coatings, BTUS Windows and Daylighting