Publications
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X Author: G Velasquez
2000
Aggarwal, S, S.R Perusse, C.J Kerr, Ramamoorthy Ramesh, D.B Romero, J .T Jr, L Boyer, and G Velasquez."Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors."Applied Physics Letters
76 (2000) 918-920. DOI
1999
Aggarwal, S, I.G Jenkins, B Nagaraj, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Conducting diffusion barriers for integration of ferroelectric capacitors on Si."Integrated Ferroelectrics
25 (1999) 205-221. DOI
.T Jr, J, L.L Boyer, G Velasquez, Ramamoorthy Ramesh, S Aggarwal, and V Keramidas."Effect of hydrogen anneals on niobium-doped lead zirconate titanate capacitors with lanthanum strontium cobalt oxide/platinum electrodes."Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38 (1999) 5361-5363.
Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr."Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes."Applied Physics Letters
75 (1999) 1787-1789. DOI