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Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques

Publication Type

Journal Article

Authors

Dhote, A.M., O. Auciello, D.M. Gruen, Ramamoorthy Ramesh

DOI

10.1063/1.1391237

Abstract

Conducting diffusion barrier layers play a critical role in high-density memory integration. We recently demonstrated that Ti-Al can be used as a diffusion barrier layer for the integration of ferroelectric capacitors with complementary metal-oxide semiconductor devices for the fabrication of nonvolatile ferroelectric random access memories (NVFRAMs). Here, we discuss results from systematic studies designed to understand Ti-Al film growth and oxidation processes using in situ ion beam sputter deposition in conjunction with complementary in situ atomic layer-resolution mass spectroscopy of recoil ion (MSRI) and surface sensitive x-ray photoelectron spectroscopy (XPS). The concurrent MSRI/XPS analysis revealed that amorphous Ti-Al layers produced by tailored sputter-deposition methods are resistant to oxidation to at least 600 °C, and that oxidation occurs only when the a-Ti-Al layers are exposed to oxygen at >600 °C, via the segregation of Ti species to the surface and TiO2 formation. The a-Ti-Al layers discussed in this letter could be used in the double functionality of a bottom electrode/diffusion barrier for the integration of ferroelectric capacitors with Si substrates for the fabrication of NVFRAMs and other devices. © 2001 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

2001

ISSN

00036951

Notes

cited By 18

Research Areas

Ramesh Lab