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Processing technologies for ferroelectric thin films and heterostructures

Publication Type

Journal Article

Authors

Auciello, O., C.M. Foster, Ramamoorthy Ramesh

DOI

10.1146/annurev.matsci.28.1.501

Abstract

Basic scientific and technological advances on ferroelectric thin films and heterostructures are discussed in relation to the work on nonvolatile ferroelectric random access memories (NVFRAMs) performed by different groups during the last seven years. A reasonable understanding of the synthesis and microstructureproperty relationships of ferroelectric thin films for NVFRAMs is demonstrated. Materials integration strategies developed to fabricate ferroelectric capacitors with practically no fatigue or imprint, long polarization retention, and low leakage current are discussed. These properties have been obtained using two ferroelectric materials, Pb(ZrxTi1-x)O3 (PZT) and SrBi2Ta2O9 (SBT), that are the main candidates for application to the first generation of commercial NVFRAMs. A discussion of current knowledge and future research directions is presented.

Journal

Annual Review of Materials Science

Volume

Year of Publication

1998

ISSN

00846600

Notes

cited By 66

Research Areas

Ramesh Lab