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Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer

Publication Type

Journal Article

Authors

Liu, B.T., K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, Ramamoorthy Ramesh, A.M. Dhote, O. Auciello

DOI

10.1063/1.1477281

Abstract

Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450°C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

2002

ISSN

00036951

Notes

cited By 45

Research Areas

Ramesh Lab