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Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Publication Type

Journal Article

Authors

Ko, C, Y Lee, Y H Chen, J Suh, D Fu, A Suslu, S Lee, J.D Clarkson, H.S Choe, S Tongay, Ramamoorthy Ramesh, J Wu

DOI

10.1002/adma.201504779

Abstract

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Journal

Advanced Materials

Volume

Year of Publication

2016

ISSN

09359648

Notes

cited By 51

Research Areas

Ramesh Lab