Publications
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X Author: J Melngailis
2005
Ma, Z, F Zavaliche, L Chen, J Ouyang, J Melngailis, A.L Roytburd, V Vaithyanathan, D.G Schlom, T Zhao, and Ramamoorthy Ramesh."Effect of 90° domain movement on the piezoelectric response of patterned PbZr 0.2 Ti 0.8 O 3 SrTiO 3 Si heterostructures."Applied Physics Letters
87 (2005). DOI
2003
Nagarajan, V, A Roytburd, A Stanishevsky, S Prasertchoung, T Zhao, L Chen, J Melngailis, O Auciello, and Ramamoorthy Ramesh."Dynamics of ferroelastic domains in ferroelectric thin films."Nature Materials
2 (2003) 43-47. DOI
2002
Stanishevsky, A, B Nagaraj, J Melngailis, Ramamoorthy Ramesh, L Khriachtchev, and E McDaniel."Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors."Journal of Applied Physics
92 (2002) 3275-3278. DOI
Nagarajan, V, A Stanishevsky, L Chen, T Zhao, B.-T Liu, J Melngailis, A.L Roytburd, Ramamoorthy Ramesh, J Finder, Z Yu, R Droopad, and K Eisenbeiser."Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si."Applied Physics Letters
81 (2002) 4215-4217. DOI
2001
Ganpule, C.S, A.L Roytburd, V Nagarajan, A Stanishevsky, J Melngailis, E.D Williams, and Ramamoorthy Ramesh."Nanoscale electromechanical phenomena in ferroelectric thin films."Materials Research Society Symposium - Proceedings
655 (2001) XVI-XVII.
2000
Aggarwal, S, C Ganpule, I.G Jenkins, B Nagaraj, A Stanishevsky, J Melngailis, E Williams, and Ramamoorthy Ramesh."High density ferroelectric memories: Materials, processing and scaling."Integrated Ferroelectrics
28 (2000) 213-225. DOI
Steinhauer, D.E, C.P Vlahacos, F.C Wellstood, S.M Anlage, C Canedy, Ramamoorthy Ramesh, A Stanishevsky, and J Melngailis."Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope."Review of Scientific Instruments
71 (2000) 2751-2758. DOI
1999
Steinhauer, D.E, C.P Vlahacos, F.C Wellstood, S.M Anlage, C Canedy, Ramamoorthy Ramesh, A Stanishevsky, and J Melngailis."Imaging of microwave permittivity, tunability, and damage recover in (Ba, Sr)TiO3 thin films."Applied Physics Letters
75 (1999) 3180-3182. DOI
Ganpule, C.S, A Stanishevsky, S Aggarwal, J Melngailis, E Williams, Ramamoorthy Ramesh, V Joshi, and C. Paz De Araujo."Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films."Applied Physics Letters
75 (1999) 3874-3876. DOI
Ganpule, C.S, A Stanishevsky, Q Su, S Aggarwal, J Melngailis, E Williams, and Ramamoorthy Ramesh."Scaling of ferroelectric properties in thin films."Applied Physics Letters
75 (1999) 409-411. DOI
1998
Stanishevsky, A, S Aggarwal, A.S Prakash, J Melngailis, and Ramamoorthy Ramesh."Focused ion-beam patterning of nanoscale ferroelectric capacitors."Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16 (1998) 3899-3902.
1996
Chen, C.-H, V Talyansky, C Kwon, M Rajeswari, R.P Sharma, Ramamoorthy Ramesh, T Venkatesan, J Melngailis, Z Zhang, and W.K Chu."Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3."Applied Physics Letters
69 (1996) 3089-3091. DOI