Research Themes +
Energy Technologies Area (ETA) researchers are continually building on the strong scientific foundation we have developed over the past 50 years. We address the world’s most pressing climate challenges by bringing to market energy-efficient innovations across the buildings, transportation, and industrial sectors. ETA is at the forefront of developing better batteries for electric vehicles; improving the country's aging electrical grid and innovating distributed energy and storage solutions; developing grid-interactive, efficient buildings; and providing the most comprehensive market and data analysis worldwide for renewable technologies like wind and solar.
Strategic Initiatives +
The Energy Technologies Area (ETA) Strategic Plan is the guiding force for our research and development for the next ten years. It clearly charts a path toward clean-energy solutions and focuses on five detailed Strategic Initiatives. The Plan provides an in-depth look at how ETA is accelerating research to provide affordable, clean energy to all while accomplishing deep, economy-wide decarbonization, looking to avoid a rise in global average temperature while simultaneously developing solutions to increase humanity's resilience to extreme weather volatility.
Publications
News +
For media inquiries,
please contact ETA
Interim Communications Manager
Kiran Julin

kjulin@lbl.gov
About Us +
The Energy Technologies Area (ETA) is unique in translating fundamental scientific discoveries into scalable technology adoption. Our approach combines an understanding of the marketplace and the role of state and federal regulation and policies. ETA's research drives real-world, practical results that affect and improve the everyday lives of Americans and those across the globe. Saving energy and battling the Climate Crisis are key to the foundation of our research, which is driven by technoeconomic analysis and in-lab experimentation and discovery.

Publications by Research Area

Demand Response

Electricity Markets & Policy

Energy Efficiency

Industrial Energy Analysis

Renewable Energy

Sustainable Energy & Environmental Systems

Publications

Publications by Division

Building Technology (BTUS)

Energy Analysis (EAEI)

Energy Storage (ESDR)

2001

Huang, Michael H., Samuel S. Mao, Henning Feick, Haoquan Yan, Yiying Wu, Hannes Kind, Eicke R. Weber, Richard E. Russo, and Peidong Yang."Room-temperature ultraviolet nanowire nanolasers."Science 292.5523 (2001) 1897-1899. DOI

1997

Leung, Michael S.H., Ralf Klockenbrink, Christian F. Kisielowski, Hiroaki Fujii, Joachim Krüger, Sudhir G. Subramanya, André Anders, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source."Materials Research Society Proceedings 449.221 (1997). DOI

1996

Kisielowski, Christian F., Joachim Krüger, Sergei Ruvimov, Tadeusz Suski, Joel W. Ager III, Erin C. Jones, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, Michael D. Bremser, Robert F. Davis, and Joachim Krüger."Strain Related Phenomena in GaN Thin Films."Physical Review B 54.24 (1996) 17745-17753. DOI

Fujii, Hiroaki, Christian F. Kisielowski, Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Impact of Growth Temperature, Pressure and Strain on the Morphology of GaN Films."Materials Research Society Symposium N – III-V Nitrides 449 (1996) 227. DOI

Kisielowski, Christian F., Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Hiroaki Fujii, Tadeusz Suski, Sudhir G. Subramanya, Joel W. Ager III, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Origin of Strain in GaN Thin Films."23rd International Conference on the Physics of Semiconductors 4 (1996) 513.

1995

Chan, James S., Nathan W. Cheung, Lawrence F. Schloss, Erin C. Jones, William S. Wong, Nathan Newman, Xiaohong Liu, Eicke R. Weber, A. Gassman, and Michael D. Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters 68.19 (1995) 2702-2704. DOI

Fu, T.C., Nathan Newman, Erin C. Jones, James S. Chan, Xiaohong Liu, Michael D. Rubin, Nathan W. Cheung, and Eicke R. Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials 24.4 (1995) 249-255. DOI

1994

Newman, Nathan, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D. Rubin, James S. Chan, Erin C. Jones, Jennifer T. Ross, Ian M. Tidswell, Kin Man Yu, Nathan W. Cheung, and Eicke R. Weber."Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy." (1994).

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