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Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset

Publication Type

Journal Article

Authors

Friessnegg, T., S. Aggarwal, Ramamoorthy Ramesh, B. Nielsen, E.H. Poindexter, D.J. Keeble

DOI

10.1063/1.126898

Abstract

Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La 0.1) × (Zr0.2Ti0.8)O3/La0.5Sr 0.5CoO3 ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. © 2000 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

2000

ISSN

00036951

Notes

cited By 119

Research Areas

Ramesh Lab