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Novel high-Tc transistors with manganite oxides

Publication Type

Journal Article

Authors

Dong, Z.W, S.P Pai, Ramamoorthy Ramesh, T Venkatesan, M Johnson, Z.Y Chen, A Cavanaugh, Y.G Zhao, X.L Jiang, R.P Sharma, S Ogale, R.L Greene

DOI

10.1063/1.367764

Abstract

One viable approach for transistor-like high-Tc three terminal devices is the quasiparticle injection device (QPID). We have fabricated Au/YBa2Cu3O7/LaAlO3/Nd 0.7Sr0.3MnO3 (NSMO) and Au/YBa 2Cu3O7/LaAlO3/LaNiO3 (LNO) heterostructures on (100) LaAlO3 substrates by pulsed laser deposition for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of the injection of spin-polarized quasiparticles from a ferromagnetic NSMO gate was compared to that of unpolarized quasiparticles from a nonmagnetic metallic LNO gate. A current gain greater than nine has been attained for spin-polarized QPIDs, which is an order of magnitude larger than the gain of spin unpolarized QPIDs. Such large effects could be useful in a variety of active high-Tc/colossal magnetoresistance heterostnicture devices. © 1998 American Institute of Physics.

Journal

Journal of Applied Physics

Volume

Year of Publication

1998

ISSN

00218979

Notes

cited By 23

Research Areas

Ramesh Lab