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Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Publication Type

Journal Article

Authors

Khan, A.I., K. Chatterjee, J.P. Duarte, Z. Lu, A. Sachid, S. Khandelwal, Ramamoorthy Ramesh, C. Hu, S. Salahuddin

DOI

10.1109/LED.2015.2501319

Abstract

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.

Journal

IEEE Electron Device Letters

Volume

Year of Publication

2016

ISSN

07413106

Research Areas

Ramesh Lab