Ferroelectric field effect device
Publication Type
Conference Paper
Authors
Schrott, A.G., J.A. Misewich, Ramamoorthy Ramesh, V. Nagarajan, Ginley D., Guha S., Carter S., Chambers S.A., Droopad R., Hosono H., Paine D.C., Schlom D.G., Tate J.
Abstract
A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.
Journal
Materials Research Society Symposium - Proceedings
Volume
747
Year of Publication
2003
ISSN
02729172
Notes
cited By 1