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Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

Publication Type

Journal Article

Authors

Ihlefeld, J.F., A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, Ramamoorthy Ramesh

DOI

10.1063/1.2767771

Abstract

BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. © 2007 American Institute of Physics.

Journal

Applied Physics Letters

Volume

Year of Publication

2007

ISSN

00036951

Research Areas

Ramesh Lab